Journal of Crystal Growth

Metalorganic molecular beam epitaxy of strained InAsP/InGaAsP multi-quantum-wells for 1.3 m wavelength laser diodes
pp. 1-7(7)
Authors: Sugiura H.; Mitsuhara M.; Oohashi H.; Hirono T.; Nakashima K.

InP-on-InGaAs interface with Ga and In coverage in metalorganic vapor phase epitaxy of InGaAs/InP superlattices
pp. 8-12(5)
Authors: Yu P.K.L.; Jiang X.S.; Clawson A.R.

Biaxial compression in GaAs thin films grown on Si
pp. 13-18(6)
Authors: Joshkin V.; Orlikovsky A.; Oktyabrsky S.; Dovidenko K.; Kvit A.; Muhamedzanov I.; Pashaev E.

Growth of InAs from monoethyl arsine
pp. 19-26(8)
Authors: Egan R.J.; Tansley T.L.; Chin V.W.L.

Cathodoluminescence investigations of three-dimensional island formation in InAs/InP quantum wells
pp. 27-34(8)
Authors: Gustafsson A.; Hessman D.; Samuelson L.; Carlin J.F.; Houdre R.; Rudra A.

ZnGeP₂/GaP multiple heterostructures on GaP substrates
pp. 35-38(4)
Authors: Bachmann K.J.; Xing G.C.

High-resolution X-ray diffraction study of ZnSe/GaAs heterostructures grown by molecular beam epitaxy
pp. 39-46(8)
Authors: Sou I.K.; Mou S.M.; Chan Y.W.; Xu G.C.; Wong G.K.L.

Growth and characterization of ZnSe grown by organometallic vapor phase epitaxy using diisopropyl selenide and diethyl zinc
pp. 47-54(8)
Authors: Bourret E.D.; Zach F.X.; Yu K.M.; Walker J.M.

Oxygen incorporation and precipitation behavior in heavily boron-doped Czochralski silicon crystals
pp. 55-63(9)
Author: Choe K.S.

Accounting for stoichiometry changes on compound semiconductor surfaces
pp. 64-73(10)
Author: Creighton J.R.

Growth of monomethylurea single crystals
pp. 74-76(3)
Authors: Paorici C.; Zeng L.; Zha M.; Zanotti L.; Razzetti C.

Formation of tetrapod-like crystals of diamond formed by hot-filament chemical vapor deposition: Effects of preformation of tungsten carbide on the substrate
pp. 77-82(6)
Authors: Aoki Y.; Nakamuta Y.; Sugawara Y.

Growth rates and interface shapes in germanium and lead tin telluride observed in-situ, real-time in vertical Bridgman furnaces
pp. 83-90(8)
Authors: Barber P.G.; Berry R.F.; Debnam W.J.; Fripp A.L.; Woodell G.; Simchick R.T.

Pb_1-xSn_xTe crystal growth in space
pp. 91-98(8)
Authors: Kinoshita K.; Yamada T.

Effect of starting melt composition on crystal growth of calcium niobium gallium garnet
pp. 99-103(5)
Authors: Shimamura K.; Fukuda T.; Kumatoriya M.

Density and surface tension properties of molten potassium niobate system
pp. 104-110(7)
Authors: Hong X.; Lu K.; Zhao Y.; Wu X.

Reactants in SiC chemical vapor deposition using CH₃SiH₃ as a source gas
pp. 111-116(6)
Author: Ohshita Y.

The effect of variation of thermal field on the morphology of -BaB₂O₄ single crystals grown by top-seeded solution growth
pp. 117-122(6)
Authors: Peshev P.; Nikolov V.

On the preparation and crystal growth of SrLaAlO₄
pp. 123-129(7)
Authors: Pajaczkowska A.; Gloubokov A.; Jablonski R.; Sass J.; Ryba-Romanowski W.; Uecker R.; Reiche P.

Reaction analysis for ZrO₂ and Y₂O₃ thin film growth by low-pressure metalorganic chemical vapor deposition using -diketonate complexes
pp. 130-146(17)
Authors: Akiyama Y.; Sato T.; Imaishi N.

Microcrystalline hydroxyapatite formation from alkaline solutions
pp. 147-154(8)
Author: Lazic S.

Solidification of acoustically levitated o-terphenyl crystals: A Raman study
pp. 155-164(10)
Author: Biswas A.

Lysozyme crystallization by vapor diffusion: Characterization and modeling in the absence and presence of exogenous minerals
pp. 165-171(7)
Authors: Sambanis A.; Kimble W.L.; Rousseau R.W.

The influence of internal crystal perfection on growth rate dispersion in a continuous suspension crystallizer
pp. 172-180(9)
Authors: Zacher U.; Mersmann A.

General prediction of statistically mean growth rates of a crystal collective
pp. 181-193(13)
Author: Mersmann A.

Growth rate dispersion of single potassium alum crystals
pp. 194-199(6)
Authors: Lacmann R.; Tanneberger U.

Growth striations in Bi&unknown;Sb alloy single crystals pulled in the presence of ultrasonic vibrations
pp. 200-206(7)
Authors: Kozhemyakin G.N.; Kolodyazhnaya L.G.

Modification of morphological stability by Soret diffusion
pp. 207-214(8)
Authors: Landzettel W.J.; Hargis K.J.; Caboot J.B.; Adkins K.L.; Strein T.G.; Veening H.; Becker H.-D.; Coriell S.R.; McFadden G.B.; Murray B.T.; Van Vaerenbergh S.; Legros J.C.

Two-step nucleation in lithium disilicate glass
pp. 215-222(8)
Authors: Demo P.; Kozisek Z.

Kinetics of macrosteps under diffusion and thermal interactions in stagnant media
pp. 223-233(11)
Author: Potapenko S.Y.

The nucleation and growth by molecular beam epitaxy of InAs on GaAs (110) misoriented substrates
pp. 234-237(4)
Authors: Joyce B.A.; Zhang X.M.; Kamiya I.; Neave J.H.; Pashley D.W.