Effect of PH3/SiH4 Gas Flow Ratio on Microstructures and Electrical Properties of N-type a-Si:H Films
Abstract:A series of N-type a-Si:H films were prepared by a plasma enhanced chemical vapor deposition method at different PH3/SiH4-doped flow ratios. The N-type a-Si:H film with the optimal PH3/SiH4 flow ratio was annealed in vacuum. The influence of PH3/SiH4 flow ratio on the microstructures and properties of a-Si:H films was investigated. The results indicate that the microstructure of N type a-Si:H films has no substantial change, but the electrical properties improves when PH3/SiH4 flow ratio increases. The a-Si:H film sample prepared at an optimal PH3/SiH4 flow ratio of 1.5%. The order degree of the film after vacuum annealing increases. The resistivity of the film after annealing is decreased by 3 orders of magnitude. The annealing treatment of the film has an influence on the crystal structure, thus improving the electrical properties of the film.
Document Type: Research Article
Publication date: 2013-12-01
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- Journal of the Chinese Ceramic Society (JCCS), published in Chinese and in English, is a comprehensive monthly periodical focused on the fields of inorganic and non-metallic materials. The main purpose of the JCCS is to report the latest creative achievements in research, production and design for ceramics, glass, cementing materials, refractory, artificial crystals and other non-metallic materials. JCCS is regarded as an important journal in inorganic and non-metallic materials sciences in China and has been awarded by China Association for Science and Technology. The full-text of papers in JCCS is also published by CNKI (China National Knowledge Infrastructure). JCCS is indexed in EI Compendex, CA( Chemical Abstracts) ,SA and Ж and more than 20 databases.
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