Monovacancy Type Defects in Fast Neutron Irradiated Czochralski Silicon
Abstract:The irradiation defects in neutron-irradiated Czochralski silicon (CZSi) were analyzed by positron annihilation spectroscopy and Fourier transform infrared (FTIR) spectroscopy. The results show that there are the massive monovacancy-type defects (VO) and multi-vacancy-type defects (V2 and V2O) in irradiated CZSi. After heat-treatment at 200–450 , the absorption bands at 720 and 919.6 cm-1 in measured FTIR spectra are associated with the monovacancy-type defects, and they have the same positron lifetime as VO (i.e., 290 ps). After heat-treatment at 450–600 , the monovacancy-type is eliminated gradually, the V4-type defects are enhanced, and the concentration of the V4-type defects reaches a maximum of 70% after heat-treatment at 600 .
Document Type: Research Article
Affiliations: 1: College of Science, Tianjin University of Technology, Tianjin 300384, China 2: School of Materials Science and Engineering, Tianjin University of Technology, Tianjin 300384, China 3: School of Mathematics and Physics, Tianjin University of Technology and Education, Tianjin 300222, China 4: School of Material Science and Engineering, Hebei University of Technology, Tianjin 300130, China
Publication date: 2013-06-01
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