Strengthening of Ti3(Si, Al)C2 by Doping with Tungsten

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Abstract:

Improving the high‐temperature strength and stiffness of Ti3SiC2 is the task of many investigations. However, methods for high‐temperature strengthening have not been established although various ways are applicable to enhance the room‐temperature mechanical properties of Ti3SiC2. In this work, we report that significant strengthening was realized at both room and high temperatures by incorporating a small amount of W into Ti3(Si, Al)C2. The onsite temperature for the rapid degradation of stiffness and strength moved more than 150°C upward to over 1200°C. The flexural strength of 5 at.% W‐doped Ti3(Si, Al)C2 is 632.9 MPa at RT and 285 MPa at 1200°C, being 176% and 170% of those for baseline material, respectively.

Document Type: Research Article

DOI: http://dx.doi.org/10.1111/jace.12050

Publication date: December 1, 2012

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