Microstructure and Electrical Properties in Low‐
2 Sb 3‐Doped O 6 Pr 11
The microstructure and electrical properties of the
6 Pr 11‐based varistor ceramics composed of O 6 Pr 11– O 2 Sb 3
ceramics were investigated in the O 2 Sb 3 content range 0–5.0 mol%. The samples were fabricated by conventional ceramic techniques. The results demonstrated that the addition
of O 2 Sb 3 to O 6 Pr 11 can promote the grain growth and the densification of the O 6 Pr 11‐based
ceramics. The average grain size of O 6 Pr 11 increased and then decreased as the O 2 Sb 3
content increased, reaching 16.4 μm by doping with 1.0 mol%. Highly dense ceramics were obtained, and the relative density reached the maximum value of 96.8%. System densification was attributed to a mass transport mechanism, caused by the presence of O 2 Sb 3,
which could favor the oxygen vacancy apparition. Only phase corresponding to O 6 Pr 11 in the sample was detected within the limit of detection of the O XRD technique.
The electric measurement indicated that the minor incorporation of 2 Sb 3 can improve the nonlinear electrical properties. This change was ascribed to the O chottky
barriers at interface of grain boundary.
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Document Type: Research Article
Publication date: 2012-09-01