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High‐Speed Epitaxial Growth of β‐SiC Film on Si(111) Single Crystal by Laser Chemical Vapor Deposition

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(111)‐oriented β‐SiC film was prepared on Si(111) by laser chemical vapor deposition at a laser power of 100 W, a total pressure of 200 Pa, and a deposition temperature of 1203 K. The β‐SiC film grew epitaxially on the Si(111) substrate with in‐plane orientation relationship of SiC [1¯10]//Si [1¯10] and SiC [1¯01]//Si [1¯01]. The deposition rate of the β‐SiC film was 40 μm/h, 10 times higher than that of conventional CVD.

Document Type: Research Article


Publication date: 2012-09-01

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