Electrical Properties of Textured Niobium‐Doped Bismuth Titanate Ceramics
‐doped bismuth titanate ceramics Nb 4 Bi (3−x) Ti
were fabricated by tape casting using plate‐like O 4 Bi 3 Ti 12 particles prepared by a molten‐salt method as the templates.
The templates were aligned in the fine‐grained matrix by aqueous tape casting with their major surface parallel to the casting plane. Effect of niobium on the grain orientation in the material was investigated. It was found that the use of a fine precursor powder led to enhanced densification
of the ceramic, while O doping reduced electrical conduction and dielectric loss, which enabled poling at high temperatures and high electric fields. The textured Nb 4 Bi 3 Ti 12
ceramic showed a high anisotropy in its dielectric properties in the directions parallel and perpendicular to the casting plane. Highly textured O BiT was obtained with the use of only 5 wt% of template particles by sintering at 800°C for 1 h.
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Document Type: Research Article
Publication date: 2012-08-01