Skip to main content

Dielectric Relaxation in BaTiO3–Bi(Zn1/2Ti1/2)O3 Ceramics

Buy Article:

$51.00 plus tax (Refund Policy)


A dramatic improvement in the dielectric and electrical properties has been observed in ceramics of 0.8BaTiO3–0.2Bi(Zn1/2Ti1/2)O3 through the introduction of Ba vacancies. It possesses a high relative permittivity (εr > 1150) along with a low dielectric loss (tan δ < 0.05) that is maintained up to temperatures as high as 460°C. It is also characterized by a high resistivity of 70 GΩ‐cm, which remains constant up to 270°C. Analysis of complex impedance (Z*) and complex electric modulus (M*) data, measured over the frequency range of 1–106 Hz, revealed a number of important findings. At high temperatures (T > 255°C), a complex plane analysis of Z″ versus Z′ and the frequency dependence of Z″ suggests an electrically inhomogeneous microstructure for the stoichiometric composition. The stoichiometric composition exhibited activation energies of ~1 eV which suggests an extrinsic conduction mechanism. However, the introduction of Ba vacancies resulted in electrically homogeneous microstructure. An overlap of the Z″ and M″ peaks in the frequency domain and much larger activation energies were observed, on the order of half of the band gap, suggesting an intrinsic conduction mechanism. A more detailed analysis of the data reveals insights into the physical mechanisms underpinning the dielectric and ac conductivity.

Document Type: Research Article


Publication date: May 1, 2012

Access Key

Free Content
Free content
New Content
New content
Open Access Content
Open access content
Partial Open Access Content
Partial Open access content
Subscribed Content
Subscribed content
Free Trial Content
Free trial content
Cookie Policy
Cookie Policy
Ingenta Connect website makes use of cookies so as to keep track of data that you have filled in. I am Happy with this Find out more