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Sol–Gel Derived ZnO-Doped Zr0.8Sn0.2TiO4 Thin Films on Indium Tin Oxide/Glass Substrate

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Abstract:

In this study, the electrical properties, optical properties, and microstructures of 1 wt% ZnO-doped (Zr0.8Sn0.2)TiO4 thin films prepared by the sol–gel method on various heat-treatment temperatures and heat-treatment times were examined. The surface structural and morphological characteristics analyzed by X-ray diffraction, scanning electron microscopy, and atomic force microscope were sensitive to the deposition conditions, such as heat-treatment time (15–60 min) and heat-treatment temperature (250–450°C). All the films exhibited ZnO-doped (Zr0.8Sn0.2)TiO4 (111) and (101) orientations perpendicular to the substrate surface, and the grain size was increased with increasing heat-treatment temperature and time. The optical transmittance spectroscopy further revealed high transparency (over 80%) in the wavelength range of 400–800 nm of visible region. At a heat-treatment temperature level of 250°C and a heat-treatment time of 15 min, the ZnO-doped Zr0.8Sn0.2TiO4 films were found to possess a dielectric constant of 21 (at 1 MHz), a dissipation factor of 0.23 (at 1 MHz), and a leakage current density of 1.87 × 10−8 A/cm2 at an electrical field of 50 V/cm.

Document Type: Research Article

DOI: http://dx.doi.org/10.1111/j.1551-2916.2010.04320.x

Affiliations: Department of Electrical Engineering, National United University, No. 1, Lien-Da, Kung-Ching Li, Miao-Li 36003, Taiwan

Publication date: June 1, 2011

bsc/jace/2011/00000094/00000006/art00037
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