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Growth and Electrical Properties of 25%Bi(Ni1/2Ti1/2)O3–75%PbTiO3 Thin Films on Pt/TiO2/SiO2/Si Substrates Using Pulsed Laser Deposition Method

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We report on growth of 25%Bi(Ni0.5Ti0.5)O3–75%PbTiO3 (25BNiT–PT) solid solution thin films and good electrical properties such as high remanent polarization, high dielectric constant, and low dissipation factor. The thin films prepared on Pt/TiO2/SiO2/Si substrates by pulsed laser deposition were well crystallized with a phase-pure perovskite structure. Well-saturated PE hysteresis loops were observed with a much larger remanent polarization than that of corresponding ceramic counterparts reported before in literature. The remanent polarization P r and coercive field E c were 40.9 μC/cm2 and 117 kV/cm, respectively, for the thin films annealed at 650°C. The thin films had a high dielectric constant of about 400–500 and a low dissipation factor of 0.03 at a frequency of 1 kHz. The good polarization characteristics of the thin films are very significant for high-temperature ferroelectric device applications.

Document Type: Research Article


Affiliations: State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University, Guangzhou 510275, China

Publication date: 2011-06-01

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