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Dielectric Properties at Microwaves Frequencies of (Ni, Ti, La, Mg)-Doped Ba0.3Sr0.7TiO3 Thin Films Deposited onHigh-Resistivity Silicon Substrates

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Abstract:

Pure and doped Ba0.3Sr0.7TiO3 thin films are deposited by radio frequency magnetron sputtering with the in situ process on high-resistivity silicon substrates. We have studied four dopants: La, Ti, Mg, and Ni with different concentrations from 1 to 5 mol%. Permittivity, dielectrics losses, and tunability are determined up to 60 GHz using a coplanar waveguide. This study highlights the difficulty to improve these electrical properties simultaneously, in particular the loss tangent and the tunability. The best improvement is obtained in case of 5 mol% La for which the losses are in the order of 7.4%, the tunability and the figure of merite are around 29% and 3.9%, respectively, at 60 GHz.

Document Type: Research Article

DOI: http://dx.doi.org/10.1111/j.1551-2916.2011.04546.x

Affiliations: 1: ST Microelectronics, SAS 16, rue Pierre et Marie Curie, 37071 Tours, France 2: Institute of Electronics, Microelectronics and Nanotechnology (IEMN), UMR CNRS 8520, Université des Sciences et Technologies de Lille, 59652 Villeneuve d'Ascq Cedex, France

Publication date: June 1, 2011

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