Textured Magnesium Titanate as Gate Oxide for GaN-Based Metal-Oxide-Semiconductor Capacitor

Authors: Hsiao, Chu-Yun; Shih, Chuan-Feng; Chien, Chih-Hua; Huang, Cheng-Liang

Source: Journal of the American Ceramic Society, Volume 94, Number 4, April 2011 , pp. 1005-1007(3)

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Abstract:

We demonstrate the first high-permittivity ceramic oxide for use as the gate oxide of the GaN-based metal-oxide-semiconductor (MOS) capacitor. An ilmenite magnesium titanate (MgTiO₃) thin film prepared by sputtering was studied. When oxygen was introduced during sputtering, the preferred orientation changed from spinel Mg₂TiO₄ (111) to ilmenite MgTiO₃ (003). The X-ray diffractometry θ−2θ and φ-scans were performed to identify the preferred films. Possible epitaxial relationships at the Mg₂TiO₄ (111)/GaN (001) and MgTiO₃ (003)/GaN (001) interfaces were proposed. Finally, the electrical properties of the Al/MgTiO₃ (003)/GaN (001)/Al MOS capacitor were presented.

Document Type: Research article

DOI: http://dx.doi.org/10.1111/j.1551-2916.2011.04439.x

Affiliations: 1: Department of Electrical Engineering, National Cheng Kung University, Tainan, 70101, Taiwan

Publication date: 2011-04-01