Skip to main content

Textured Magnesium Titanate as Gate Oxide for GaN-Based Metal-Oxide-Semiconductor Capacitor

Buy Article:

$51.00 plus tax (Refund Policy)


We demonstrate the first high-permittivity ceramic oxide for use as the gate oxide of the GaN-based metal-oxide-semiconductor (MOS) capacitor. An ilmenite magnesium titanate (MgTiO3) thin film prepared by sputtering was studied. When oxygen was introduced during sputtering, the preferred orientation changed from spinel Mg2TiO4 (111) to ilmenite MgTiO3 (003). The X-ray diffractometry −2 and -scans were performed to identify the preferred films. Possible epitaxial relationships at the Mg2TiO4 (111)/GaN (001) and MgTiO3 (003)/GaN (001) interfaces were proposed. Finally, the electrical properties of the Al/MgTiO3 (003)/GaN (001)/Al MOS capacitor were presented.

Document Type: Research Article


Affiliations: Department of Electrical Engineering, National Cheng Kung University, Tainan, 70101, Taiwan

Publication date: 2011-04-01

  • Access Key
  • Free ContentFree content
  • Partial Free ContentPartial Free content
  • New ContentNew content
  • Open Access ContentOpen access content
  • Partial Open Access ContentPartial Open access content
  • Subscribed ContentSubscribed content
  • Partial Subscribed ContentPartial Subscribed content
  • Free Trial ContentFree trial content
Cookie Policy
Cookie Policy
Ingenta Connect website makes use of cookies so as to keep track of data that you have filled in. I am Happy with this Find out more