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Epitaxial Growth of ZnO Films on ZnO-Buffered Al2O3 (0001) in Water at 95°C

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Abstract:

A very low-temperature (95°C) aqueous solution route has applied to growing epitaxial ZnO films on Al2O3 (0001). A 500-nm-thick ZnO film was beforehand deposited on Al2O3 (0001) by sputtering as a buffer layer to enhance the homoepitaxial growth of ZnO in the aqueous solution. At an early stage of growth, hexagon-shaped ZnO microcrystals grow. At later stages of growth, the hexagon microcrystals coalesce, finally producing continuous epitaxial films of ZnO, which has been confirmed by high-resolution X-ray diffraction studies.

Document Type: Research Article

DOI: http://dx.doi.org/10.1111/j.1551-2916.2011.04406.x

Affiliations: School of Materials Science and Engineering, Inha University, Incheon 402-751, Korea

Publication date: April 1, 2011

bsc/jace/2011/00000094/00000004/art00003
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