Skip to main content

Enhanced Lateral Growth of Zinc Oxide Nanowires on Sensor Chips

Buy Article:

$51.00 plus tax (Refund Policy)


We have adapted a simple concept analogous to substrate tilting used in common chemical vapor deposition processes to enhance the lateral growth of zinc oxide nanowires for bridging two adjacent electrodes in sensor chips. The chips were placed at elevated positions to avoid reactant depletion due to the existence of a diffusion boundary layer atop the horizontal substrate support. We show that the nanowire bridging is much improved and better than that reported in the literatures. As a result, the sensor chip sensitivity is also enhanced as compared with the previously reported data.

Document Type: Research Article


Affiliations: 1: Institute of Nanotechnology and Microsystems Engineering, National Cheng Kung University, Tainan 70101, Taiwan 2: Department of Materials Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan

Publication date: March 1, 2011


Access Key

Free Content
Free content
New Content
New content
Open Access Content
Open access content
Subscribed Content
Subscribed content
Free Trial Content
Free trial content
Cookie Policy
Cookie Policy
Ingenta Connect website makes use of cookies so as to keep track of data that you have filled in. I am Happy with this Find out more