If you are experiencing problems downloading PDF or HTML fulltext, our helpdesk recommend clearing your browser cache and trying again. If you need help in clearing your cache, please click here . Still need help? Email help@ingentaconnect.com

Analysis of High-Voltage ZnO Varistor Prepared from a Novel Chemically Aided Method

$48.00 plus tax (Refund Policy)

Download / Buy Article:


High-voltage varistor materials were prepared using an ultrafine additives precursor obtained from the precipitation method. Microstructural and electrical studies showed that the sample exhibited a smaller average grain size (d=4.5 m) and a considerably higher breakdown voltage (Eb=1610±30 V/mm) as compared with the conventional one (d=6.5 m, Eb=400±30 V/mm). The high voltage is attributed to the improvement in microstructure homogeneity and the formation of more active grain boundaries per unit volume. This novel route may explore the commercial possibility of device miniaturization.

Document Type: Research Article

DOI: http://dx.doi.org/10.1111/j.1551-2916.2010.03865.x

Affiliations: 1: Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China 2: National Key Laboratory of Shock Wave and Detonation Physics, Institute of Fluid Physics, Chinese Academy of Engineering Physics, Mianyang 621900, China

Publication date: September 1, 2010

Related content



Share Content

Access Key

Free Content
Free content
New Content
New content
Open Access Content
Open access content
Subscribed Content
Subscribed content
Free Trial Content
Free trial content
Cookie Policy
Cookie Policy
ingentaconnect website makes use of cookies so as to keep track of data that you have filled in. I am Happy with this Find out more