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Low-Temperature Processing of Silicon Oxycarbide-Bonded Silicon Carbide

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Abstract:

Silicon oxycarbide (SiOC)-bonded SiC ceramics were fabricated from SiC–polysiloxane mixtures at temperatures as low as 700°–900°C using a simple pressing and heat-treatment process. During heat treatment, the polysiloxane transformed to an amorphous SiOC phase, which acted as the bonding material between SiC particles. The SiOC-bonded SiC ceramics obtained had 18%–24% residual porosity and a flexural strength of 32–82 MPa depending on the starting SiC particle size and heat-treatment temperature.

Document Type: Research Article

DOI: http://dx.doi.org/10.1111/j.1551-2916.2010.03812.x

Affiliations: Department of Materials Science and Engineering, The University of Seoul, Seoul 130-743, Korea

Publication date: September 1, 2010

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