Low-Temperature Processing of Silicon Oxycarbide-Bonded Silicon Carbide
Abstract:Silicon oxycarbide (SiOC)-bonded SiC ceramics were fabricated from SiC–polysiloxane mixtures at temperatures as low as 700°–900°C using a simple pressing and heat-treatment process. During heat treatment, the polysiloxane transformed to an amorphous SiOC phase, which acted as the bonding material between SiC particles. The SiOC-bonded SiC ceramics obtained had 18%–24% residual porosity and a flexural strength of 32–82 MPa depending on the starting SiC particle size and heat-treatment temperature.
Document Type: Research Article
Affiliations: Department of Materials Science and Engineering, The University of Seoul, Seoul 130-743, Korea
Publication date: September 1, 2010