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Rapid, Low-Temperature Synthesis of -SiC Nanowires from Si and Graphite

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-SiC nanowires were synthesized at a temperature as low as 150°C by the reaction of Si and graphite induced by an additional reaction between Na and S. Characterization by X-ray diffraction, high-resolution transmission electron microscopy, IR spectra, and Raman spectra demonstrates the formation of curly -SiC nanowires with several millimeters in length and 50–70 nm in diameter. Also, a prominent peak at 387 nm is observed in the visible photoluminescence emission. Besides the temperature, the molar ratio of S to Si (or graphite) has significant influence on the synthesis of SiC at relatively low temperatures.

Document Type: Research Article


Affiliations: Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials (Ministry of Education), Shandong University, Jinan 250061, China

Publication date: 2010-09-01

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