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Effects of Ultrathin TiOx Seeding Layer on Crystalline Orientation and Electrical Properties of Sputtered (Ba,Sr)TiO3 Thin Films

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A series of ultrathin TiOx (0–12 nm) seeded (Ba,Sr)TiO3 (BST) thin films have been prepared on Pt (111)/TiOx/SiO2/Si substrates by RF-magnetron sputtering. Experimental results show that an ultrathin TiOx layer acts as an initial template for the BST films in the first nucleation stage, resulting in a significant influence on crystalline orientation and electrical characteristics of the resultant BST films. Interestingly, highly (111) oriented BST film [α(111)∼97%] with 5-nm-thick TiOx seeding layer exhibits a shifted Curie temperature (Tc=275 K) and an enhanced tunability of 61.16% at 400 kV/cm, when compared with (001)-oriented BST without TiOx layer (Tc=250 K and tunability=50.05%).

Document Type: Research Article


Affiliations: 1: Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China 2: IEMN-DOAE-MIMM Team, UMR CNRS 8520, 59655 Lille, France

Publication date: August 1, 2010


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