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Fabrication of p-Type Li-Doped ZnO Films by RF Magnetron Sputtering

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The p-type Li-doped ZnO films are successfully deposited on a glass substrate by RF magnetron sputtering at room temperature. The pure, crystalline sputtering target of LiXZn1−XO1−X/2 with X in the range of 0–0.003 is fabricated using the powder synthesized by the thermal decomposition of a metal–nitrate–tartrate gel complex at 400°–800°C. The complex is prepared by dissolving nitrates of zinc and lithium in an aqueous solution with nitric and tartaric acids. The resulting compacts, which can be densified at 1400°C, exhibit a decreasing trend of electrical resistivity with increasing Li content. For the composition with 0.2 mol% Li, the p-type Li-doped ZnO film has an electrical resistivity of 1.3 Ω·cm, Hall mobility of 0.77 cm2·(V·s)−1, carrier concentration of 6.67 × 1018 cm−3, and high optical transmittance in the visible region.

Document Type: Research Article


Affiliations: 1: Material and Chemical Research Laboratories, Industrial Technology Research Institute, Hsinchu, Taiwan 2: Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan

Publication date: July 1, 2010


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