If you are experiencing problems downloading PDF or HTML fulltext, our helpdesk recommend clearing your browser cache and trying again. If you need help in clearing your cache, please click here . Still need help? Email help@ingentaconnect.com

Fabrication of p-Type Li-Doped ZnO Films by RF Magnetron Sputtering

$48.00 plus tax (Refund Policy)

Download / Buy Article:


The p-type Li-doped ZnO films are successfully deposited on a glass substrate by RF magnetron sputtering at room temperature. The pure, crystalline sputtering target of LiXZn1−XO1−X/2 with X in the range of 0–0.003 is fabricated using the powder synthesized by the thermal decomposition of a metal–nitrate–tartrate gel complex at 400°–800°C. The complex is prepared by dissolving nitrates of zinc and lithium in an aqueous solution with nitric and tartaric acids. The resulting compacts, which can be densified at 1400°C, exhibit a decreasing trend of electrical resistivity with increasing Li content. For the composition with 0.2 mol% Li, the p-type Li-doped ZnO film has an electrical resistivity of 1.3 Ω·cm, Hall mobility of 0.77 cm2·(V·s)−1, carrier concentration of 6.67 × 1018 cm−3, and high optical transmittance in the visible region.

Document Type: Research Article

DOI: http://dx.doi.org/10.1111/j.1551-2916.2010.03636.x

Affiliations: 1: Material and Chemical Research Laboratories, Industrial Technology Research Institute, Hsinchu, Taiwan 2: Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan

Publication date: July 1, 2010

Related content



Share Content

Access Key

Free Content
Free content
New Content
New content
Open Access Content
Open access content
Subscribed Content
Subscribed content
Free Trial Content
Free trial content
Cookie Policy
Cookie Policy
ingentaconnect website makes use of cookies so as to keep track of data that you have filled in. I am Happy with this Find out more