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Growth and Electric Properties of MPB BiScO3–PbTiO3 Thin Films on La0.7Sr0.3MnO3-Coated Silicon Substrates

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Abstract:

Morphotropic phase boundary BiScO3–PbTiO3 (BSPT) thin films were fabricated using La0.7Sr0.3MnO3 (LSMO) as bottom electrodes on silicon substrates via a sol–gel method. Pt/BSPT/Pt systems were also prepared as the comparison. Both BSPT and LSMO were well crystallized and pure perovskite phases were observed through the X-ray diffraction measurement. Well-saturated polarization hysteresis loops were obtained. A much bigger remanent polarization (Pr) of BSPT/LSMO was acquired than that of BSPT/Pt. The remanent polarization and coercive field of BSPT/LSMO were 28 C/cm2 and 200 kV/cm, respectively. The films had a room-temperature dielectric constant of 720. The room-temperature piezoelectric coefficient d33 of 35 pm/V was observed, which was better than that of BPST/Pt that had been reported.

Document Type: Research Article

DOI: http://dx.doi.org/10.1111/j.1551-2916.2010.03630.x

Affiliations: 1: Group of Ferroelectric & Piezoelectric Ceramics and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050, China 2: IEMN-DOAE, CNRS UMR 8520, Cité scientifique, 59655 Villeneuve-d'Ascq, Cedex, France

Publication date: June 1, 2010

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