Growth and Electric Properties of MPB BiScO3–PbTiO3 Thin Films on La0.7Sr0.3MnO3-Coated Silicon Substrates
Morphotropic phase boundary BiScO3–PbTiO3 (BSPT) thin films were fabricated using La0.7Sr0.3MnO3 (LSMO) as bottom electrodes on silicon substrates via a sol–gel method. Pt/BSPT/Pt systems were also prepared as the comparison. Both BSPT and LSMO were well crystallized and pure perovskite phases were observed through the X-ray diffraction measurement. Well-saturated polarization hysteresis loops were obtained. A much bigger remanent polarization (Pr) of BSPT/LSMO was acquired than that of BSPT/Pt. The remanent polarization and coercive field of BSPT/LSMO were 28 C/cm2 and 200 kV/cm, respectively. The films had a room-temperature dielectric constant of 720. The room-temperature piezoelectric coefficient d33 of 35 pm/V was observed, which was better than that of BPST/Pt that had been reported.
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Document Type: Research Article
Group of Ferroelectric & Piezoelectric Ceramics and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050, China
IEMN-DOAE, CNRS UMR 8520, Cité scientifique, 59655 Villeneuve-d'Ascq, Cedex, France
Publication date: 2010-06-01