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High Thermal Stability and Photoluminescence of Si–N-Codoped BaMgAl10O17:Eu2+ Phosphors

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The luminance degradation of BaMgAl10O17:Eu2+(BAM) caused by baking at 600°C was studied. The dissolution of Si–N into BAM lattice lead to only a reduction in the lattice parameters. Under UV excitation, the Si–N codoping enhanced the luminescent intensity by a factor of 110% for the as-received phosphors and by a factor of 122% for phosphors baked at 600°C for 1 h. This could be attributed to the stable local structure surrounding the Eu2+ ions and the lower electronegativity of nitrogen. The proposed method is expected to be potentially applicable to other aluminate phosphors with higher stability and photoluminescence.

Document Type: Research Article


Affiliations: Laboratory of Materials for Energy Conversion, Department of Materials Science and Engineering, University of Science and Technology of China, Hefei 230026, China

Publication date: June 1, 2010


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