Electrodeposition of Titania Thin Films on Metallic Surface for High-k Dielectric Applications

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Current microelectronics devices based on flexible as well as rigid substrates demand high dielectric constant (k) films to be grown on conductive substrate from a low-cost, low-temperature deposition technique. In this study, we produced high-k titania (TiO2) films through an affordable electrodeposition protocol from the electrochemical bath maintained at about 0°C. The deposition occurs through a rapid hydrolysis mechanism of titanium containing ions in the precursor solution aided by electrochemically generated hydroxyl ions formed near the cathode surface (copper (Cu) substrate). Upon attaining a sufficient supersaturation level, such hydrolyzed species precipitate to form a titania thin film on the cathode surface. While depositing from a highly acidic precursor solution, Cu substrate was protected by a cathodic potential (−3 to −5 V against the counter electrode). The resultant titania films show nanoparticulate structures evolved from nucleation and growth events of the in situ precipitated particles. Much higher deposition rate (about 1 m/min) was observed compared with that of typical chemical bath deposition. The resultant films with a thickness of 1500 nm grown on Cu exhibit very high dielectric properties (e.g., k∼30, capacitance density >110 nF/in.2 at 100 kHz) and moderate breakdown voltage (VB) (∼17.5 V). These properties indicate the potential of electrodeposited titania films to be used as a small-area thin-film capacitor for miniaturized electronic devices.

Document Type: Research Article

DOI: http://dx.doi.org/10.1111/j.1551-2916.2009.03452.x

Affiliations: 1: Department of Mechanical Engineering & Materials Science and Engineering Program, State University of New York (SUNY), Binghamton, New York 13902-6000 2: Endicott Interconnect Technologies Inc., Endicott, New York 13760

Publication date: March 1, 2010

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