Skip to main content

Negative Thermal Expansion and Correlated Magnetic and Electrical Properties of Si-Doped Mn3GaN Compounds

Buy Article:

$51.00 plus tax (Refund Policy)


The negative thermal expansion (NTE) and correlated magnetic and electrical transport properties of Mn3GaxSi1−xN were investigated. For pure Mn3GaN, there is a large NTE effect corresponding to the antiferromagnetic to paramagnetic transition. Very interestingly, when partial Ga was replaced by Si, the NTE properties around the magnetic transition were changed. The NTE temperature range was broadened to ΔT=148 K for Mn3Ga0.75Si0.25N and the linear thermal expansion coefficient was estimated as =−1.4 × 10−5 K−1 (272–420 K). Accordingly, the resistivity also showed a decrease from 327 to 395 K with temperature. With a further increasing Si content to x=0.5, the magnetic transition still occured, but the NTE effect did not appear. After careful observation, an anomaly was found at around 350 K in aT, –T, and DSC curves of Mn3Ga0.5Si0.5N, respectively. This phenomenon strongly implies the close correlation among lattice, spin, and charge in this series materials.

Document Type: Research Article


Affiliations: 1: Center for Condensed Matter and Materials Physics, School of Physics, Beihang University, Beijing 100083, China 2: College of Materials Science and Engineering, Shenzhen University, Shenzhen 518060, China

Publication date: March 1, 2010

Access Key

Free Content
Free content
New Content
New content
Open Access Content
Open access content
Partial Open Access Content
Partial Open access content
Subscribed Content
Subscribed content
Free Trial Content
Free trial content
Cookie Policy
Cookie Policy
Ingenta Connect website makes use of cookies so as to keep track of data that you have filled in. I am Happy with this Find out more