Skip to main content

Fabrication and Tunable Dielectric Properties of Magnesium-Doped Lead Barium Zirconate Thin Films

Buy Article:

$43.00 plus tax (Refund Policy)

In present work, (Pb0.50Ba0.50)ZrO3 (PBZ) thin films doped by Mg from 0 to 5 mol% were deposited on Pt(111)/TiO2/SiO2/Si substrates by the sol–gel method. The phase structure of the Mg-doped PBZ thin films were characterized by X-ray diffraction. The electric-field and temperature-dependent electrical properties of the Mg-doped PBZ thin films were also investigated in detail. It was found that the Mg content had a strong influence on the dielectric properties of the thin films. The maximum values of dielectric permittivity and dielectric loss were obtained with 1 mol% Mg-doping PBZ thin films. However, the figure of merit (FOM) of the films was improved with increase in the Mg content.
No References
No Citations
No Supplementary Data
No Article Media
No Metrics

Document Type: Research Article

Affiliations: 1: Functional Materials Research Laboratory, Tongji University, Shanghai 200092, China 2: School of Materials and Metallurgy, Inner Mongolia University of Science and Technology, Baotou 014010, China

Publication date: 01 March 2010

  • Access Key
  • Free content
  • Partial Free content
  • New content
  • Open access content
  • Partial Open access content
  • Subscribed content
  • Partial Subscribed content
  • Free trial content
Cookie Policy
Cookie Policy
Ingenta Connect website makes use of cookies so as to keep track of data that you have filled in. I am Happy with this Find out more