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Fabrication and Tunable Dielectric Properties of Magnesium-Doped Lead Barium Zirconate Thin Films

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In present work, (Pb0.50Ba0.50)ZrO3 (PBZ) thin films doped by Mg from 0 to 5 mol% were deposited on Pt(111)/TiO2/SiO2/Si substrates by the sol–gel method. The phase structure of the Mg-doped PBZ thin films were characterized by X-ray diffraction. The electric-field and temperature-dependent electrical properties of the Mg-doped PBZ thin films were also investigated in detail. It was found that the Mg content had a strong influence on the dielectric properties of the thin films. The maximum values of dielectric permittivity and dielectric loss were obtained with 1 mol% Mg-doping PBZ thin films. However, the figure of merit (FOM) of the films was improved with increase in the Mg content.

Document Type: Research Article


Affiliations: 1: Functional Materials Research Laboratory, Tongji University, Shanghai 200092, China 2: School of Materials and Metallurgy, Inner Mongolia University of Science and Technology, Baotou 014010, China

Publication date: March 1, 2010


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