Skip to main content

Voltage-Dependent Low-Field Bulk Resistivity in BaTiO3:Zn Ceramics

Buy Article:

$51.00 plus tax (Refund Policy)


Ceramics of composition Ba(Ti1−xZnx)O3−x: 0.00003≤x≤0.01 exhibit modest semiconductivity, whose value is increased by up to two orders of magnitude under the action of a small dc bias voltage. The effect, which is not observed in undoped BaTiO3, occurs in both grain and grain boundary regions and is attributed to the nature of the defect structure, which contains highly polarized clusters. It is proposed that internal electron transfer within the clusters under the action of a dc bias voltage leads to a more conductive excited state, which gradually returns to the ground state when the dc bias is removed.

Document Type: Research Article


Affiliations: 1: Universitat Jaume I, Departamento de Química Inorgánica y Orgánica, Avda. Sos Baynat s/n, 12071 Castellón, Spain 2: University of Sheffield, Department of Engineering Materials, Mappin Street, Sheffield S1 3JD, UK

Publication date: February 1, 2010


Access Key

Free Content
Free content
New Content
New content
Open Access Content
Open access content
Subscribed Content
Subscribed content
Free Trial Content
Free trial content
Cookie Policy
Cookie Policy
ingentaconnect website makes use of cookies so as to keep track of data that you have filled in. I am Happy with this Find out more