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Voltage-Dependent Low-Field Bulk Resistivity in BaTiO3:Zn Ceramics

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Abstract:

Ceramics of composition Ba(Ti1−xZnx)O3−x: 0.00003≤x≤0.01 exhibit modest semiconductivity, whose value is increased by up to two orders of magnitude under the action of a small dc bias voltage. The effect, which is not observed in undoped BaTiO3, occurs in both grain and grain boundary regions and is attributed to the nature of the defect structure, which contains highly polarized clusters. It is proposed that internal electron transfer within the clusters under the action of a dc bias voltage leads to a more conductive excited state, which gradually returns to the ground state when the dc bias is removed.

Document Type: Research Article

DOI: https://doi.org/10.1111/j.1551-2916.2009.03416.x

Affiliations: 1: Universitat Jaume I, Departamento de Química Inorgánica y Orgánica, Avda. Sos Baynat s/n, 12071 Castellón, Spain 2: University of Sheffield, Department of Engineering Materials, Mappin Street, Sheffield S1 3JD, UK

Publication date: 2010-02-01

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