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Broadband Near-IR Emission in Tm/Er-Codoped GeS2–In2S3-Based Chalcohalide Glasses

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The near IR emission spectra of Tm/Er-codoped GeS2–In2S3-based chalcohalide glasses are studied with an 808 nm laser as excitation source. A broad emission with a full-width at half-maximum of ∼170 nm is recorded in a 0.5Tm2S3–0.1Er2S3-codoped 70GeS2–20In2S3–10CsBr (in mol%) glass. The luminescence mechanisms are discussed with different CsI concentration, different halogen atoms, and different In content. These results suggest that both halogen (X) atoms and [InSxX4−x] structural units can enhance the emission intensity located at 1460 nm.

Document Type: Research Article


Affiliations: 1: Key Laboratory for Ultrafine Materials of Ministry of Education, School of Materials Science and Engineering, East China University of Science and Technology, Shanghai 200237, China 2: Key Laboratory of Material Science and Technology for High Power Lasers, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China

Publication date: December 1, 2009


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