Broadband Near-IR Emission in Tm/Er-Codoped GeS2–In2S3-Based Chalcohalide Glasses
The near IR emission spectra of Tm/Er-codoped GeS2–In2S3-based chalcohalide glasses are studied with an 808 nm laser as excitation source. A broad emission with a full-width at half-maximum of ∼170 nm is recorded in a 0.5Tm2S3–0.1Er2S3-codoped 70GeS2–20In2S3–10CsBr (in mol%) glass. The luminescence mechanisms are discussed with different CsI concentration, different halogen atoms, and different In content. These results suggest that both halogen (X) atoms and [InSxX4−x] structural units can enhance the emission intensity located at 1460 nm.
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Document Type: Research Article
Key Laboratory for Ultrafine Materials of Ministry of Education, School of Materials Science and Engineering, East China University of Science and Technology, Shanghai 200237, China
Key Laboratory of Material Science and Technology for High Power Lasers, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
Publication date: 2009-12-01