Fabrication and Characterization of Sol–Gel Derived (100)-Textured (Pb0.97La0.02)(Zr0.95Ti0.05)O3 Thin Films
A typical kind of antiferroelectric (AFE) thin films with the composition of (Pb0.97La0.02)(Zr0.95Ti0.05)O3 (PLZT) were successfully fabricated on the platinum-buffered silicon substrates through the modified sol–gel method. X-ray diffractometer results indicated that PLZT films possessed a pure perovskite structure with a strong (100) orientation. The dielectric permittivity-field and polarization–field measurements demonstrated the AFE nature of the PLZT thin films. The level of electric-field-induced strain was measured to be about 0.65% using an scanning probe microscope.
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