Microwave Dielectric Properties of Ti-Substituted Bi2 (Zn2/3Nb4/3)O7 Pyrochlores at Cryogenic Temperatures
Abstract:Monoclinic pyrochlore ceramic Bi2Zn2/3−x/3Nb4/3−2x/3TixO7 (M–BZN) with x=0–0.4 is synthesized and the structure and microwave cryogenic properties are scrutinized. The dielectric constant (′) and loss tangent (tan) of these ceramics are measured at a frequency of 3 GHz and temperature range of 15–300 K. With an increase in x value from 0 to 0.4, the dielectric constant and dielectric loss tangent of the investigated materials increase from 70 to 114 and 0.009 to 0.061, respectively. The Ti-substituted ceramics show an increase in dielectric constant with temperature, and the loss tangent shows a peak around 200 K. The peak in the dielectric loss tangent becomes more prominent with an increase of Ti content. The temperature where the dielectric loss tangent peak appears is found to be decreasing slightly with an increase of titanium doping. The observed dielectric characteristics of the titanium-doped M–BZN ceramics are attributed to the presence of the relaxation in these materials, originating from the disorder caused by the Ti4+ substitution.
Document Type: Research Article
Affiliations: 1: School of Physics, University of Hyderabad, Hyderabad 500046, India 2: Electronic Material Research Laboratory, School of Engineering, James Cook University, Townsville, Qld 4811, Australia
Publication date: 2009-06-01