High-Temperature Stability of Lanthanum Orthophosphate (Monazite) on Silicon Carbide at Low Oxygen Partial Pressures
Abstract:The stability of lanthanum orthophosphate (LaPO4) on SiC was investigated using a LaPO4-coated SiC fiber at 1200°–1400°C at low oxygen partial pressures. A critical oxygen partial pressure exists below which LaPO4 is reduced in the presence of SiC and reacts to form La2O3 or La2Si2O7 and SiO2 as the solid reaction products. The critical oxygen partial pressure increases from ∼0.5 Pa at 1200°C to ∼50 Pa at 1400°C. Above the critical oxygen partial pressure, a thin SiO2 film, which acts as a reaction barrier, exists between the SiC fiber and the LaPO4 coating. Continuous LaPO4 coatings and high strengths were obtained for coated fibers that were heated at or below 1300°C and just above the critical oxygen partial pressure for each temperature. At temperatures above 1300°C, the thin LaPO4 coating becomes morphologically unstable due to free-energy minimization as the grain size reaches the coating thickness, which allows the SiO2 oxidation product to penetrate the coating.
Document Type: Research Article
Affiliations: Materials and Manufacturing Directorate, Air Force Research Laboratory Wright-Patterson Air Force Base, Ohio 45433-7817
Publication date: July 1, 2008