Orientation Control Growth of Lanthanum Nickelate Thin Films Using Chemical Solution Deposition
Highly (100)- and (110)-oriented LaNiO3 (LNO) thin films were successfully prepared on a Si (100) substrate using the chemical solution deposition method. It was somewhat surprising to find that the orientation of LNO films depended on the heating rates of the temperature range of 200°–400°C. The samples with heating rates beyond 10°C/s showed the preferential (100) orientation, while those with heating rates below 6.67°C/s showed the preferential (110) orientation. The orientation mechanism is controlled by the thermodynamics of nucleation and crystal growth. LNO films with controlled orientation having low resistivities of 2 mΩ·cm are a good basis for integrating ferroelectric applications.
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Document Type: Research Article
Affiliations: Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China
Publication date: 2007-11-01