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Formation of Silicone Carbide Membrane by Radiation Curing of Polycarbosilane and Polyvinylsilane and its Gas Separation up to 250°C

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Abstract:

Silicon carbide (SiC) ceramic coating was developed from precursor polymer blend of polycarbosilane and polyvinylsilane on porous alumina substrate by radiation curing. The polymers were crosslinked with oxygen present in the atmosphere during irradiation and pyrolyzed at 850°C in order to convert the polymer into SiC ceramics. Fabricated SiC film was used as a membrane for gas separation, achieving high separation ratios of 206 for H2 and 241 for He over the nitrogen at 250°C.

Document Type: Research Article

DOI: https://doi.org/10.1111/j.1551-2916.2006.01376.x

Affiliations: Takasaki Advanced Radiation Research Institute, Japan Atomic Energy Agency, Takasaki, Gunma, 370-1292 Japan

Publication date: 2007-01-01

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