In Situ Growth of -SiC Nanowires in Porous SiC Ceramics
Polycarbosilane (PCS) was used as a precursor to prepare porous silicon carbide (SiC) ceramics with in situ growth of -SiC nanowires. The pore size of the as-prepared porous ceramics was 1.37 m in average, and had a narrow distribution. The nanowires with diameters ranging from ∼10 to 50 nm existed in the channels of the porous body. Their morphology, microstructure, and composition were characterized by field emission scanning electron microscopy, transmission electron microscopy, and energy-dispersive X-ray spectroscopy, which confirmed that the nanowires had a single-crystal -SiC structure with the 〈111〉 growth direction. A vapor–liquid–solid process was discussed as a possible growth mechanism of the -SiC nanowires.
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Document Type: Research Article
Affiliations: Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China
Publication date: 2005-09-01