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Measurements and Finite-Element Simulations of Residual Stresses Developed in Si3N4/Ni Diffusion Bonds

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Abstract:

High-resolution X-ray scanning diffractometry has been used to study the residual strain in Si3N4/Ni diffusion bonds. Bonds were made by directly joining Ni and Si3N4 samples of same geometry by applying high temperature and enough mechanical pressure. The axial and radial strain profiles have been determined by X-ray diffraction in the ceramic bodies along selected lines perpendicular to the bonding interface. A very small absorption was assured as the X-ray experiments have been performed at the energy of 60 keV, which allowed measurements of the strain and stress fields in the ceramic bulk. The finite-element method calculations carried out showed an excellent agreement with the experimental data.

Document Type: Research Article

DOI: http://dx.doi.org/10.1111/j.1551-2916.2005.00485.x

Affiliations: 1: Instituto de Ciencia de Materiales de Madrid, CSIC, Cantoblanco, 28049 Madrid, Spain 2: Instituto de Cerámica y Vidrio, CSIC, Cantoblanco, 28049 Madrid, Spain 3: Dep. Mecánica de Medios Continuos y Teoría de Estructuras, Escuela Politécnica Superior, Universidad Carlos III de Madrid, Avda. Universidad, 30, 28911 Leganés, Spain

Publication date: September 1, 2005

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