Skip to main content

Laser-Assisted Growth of Superconducting MgB2 Films in an In Situ Annealing Process Using a Stoichiometric Target

Buy Article:

$51.00 plus tax (Refund Policy)


A superconducting MgB2 film with a superconducting transition temperature of ∼36 K was successfully prepared on an MgO substrate by pulsed-laser ablation from a stoichiometric MgB2 target. A multilayer deposition process involving interposed Mg-rich layers was performed at 200°C by controlling the laser energy density in order to maintain the correct stoichiometry, and followed by an in situ annealing process at temperature ranging from 700° to 900°C. It was found that smooth, fine-grained films with superconducting transition temperatures of 24–36 K could be obtained from in situ annealing of the as-deposited multilayer at 900°C without excess Mg addition.

Document Type: Research Article


Affiliations: 1: Department of Ceramic Engineering, CPRC, Hanyang University, Seoul 133-791, Korea 2: Nanoarchitectonics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8565, Japan

Publication date: September 1, 2005

Access Key

Free Content
Free content
New Content
New content
Open Access Content
Open access content
Subscribed Content
Subscribed content
Free Trial Content
Free trial content
Cookie Policy
Cookie Policy
Ingenta Connect website makes use of cookies so as to keep track of data that you have filled in. I am Happy with this Find out more