Laser-Assisted Growth of Superconducting MgB2 Films in an In Situ Annealing Process Using a Stoichiometric Target
Abstract:A superconducting MgB2 film with a superconducting transition temperature of ∼36 K was successfully prepared on an MgO substrate by pulsed-laser ablation from a stoichiometric MgB2 target. A multilayer deposition process involving interposed Mg-rich layers was performed at 200°C by controlling the laser energy density in order to maintain the correct stoichiometry, and followed by an in situ annealing process at temperature ranging from 700° to 900°C. It was found that smooth, fine-grained films with superconducting transition temperatures of 24–36 K could be obtained from in situ annealing of the as-deposited multilayer at 900°C without excess Mg addition.
Document Type: Research Article
Affiliations: 1: Department of Ceramic Engineering, CPRC, Hanyang University, Seoul 133-791, Korea 2: Nanoarchitectonics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8565, Japan
Publication date: September 1, 2005