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Laser-Assisted Growth of Superconducting MgB2 Films in an In Situ Annealing Process Using a Stoichiometric Target

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Abstract:

A superconducting MgB2 film with a superconducting transition temperature of ∼36 K was successfully prepared on an MgO substrate by pulsed-laser ablation from a stoichiometric MgB2 target. A multilayer deposition process involving interposed Mg-rich layers was performed at 200°C by controlling the laser energy density in order to maintain the correct stoichiometry, and followed by an in situ annealing process at temperature ranging from 700° to 900°C. It was found that smooth, fine-grained films with superconducting transition temperatures of 24–36 K could be obtained from in situ annealing of the as-deposited multilayer at 900°C without excess Mg addition.

Document Type: Research Article

DOI: http://dx.doi.org/10.1111/j.1551-2916.2005.00465.x

Affiliations: 1: Department of Ceramic Engineering, CPRC, Hanyang University, Seoul 133-791, Korea 2: Nanoarchitectonics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8565, Japan

Publication date: September 1, 2005

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