Gas Release of SiC Implanted with Deuterium or Helium

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Abstract:

Helium (He+) or Deuterium (D2+) (20 keV) was implanted into polycrystalline -SiC with an ion dose of 7.2 × 1021 (D or He)/m2. The implanted specimens were heated at a heating rate of 10 or 20 K/min from room temperature to 1373 K, and the thermal release spectroscopic data were obtained. A sharp peak appeared at approximately 1270 K in the case of He release, and here the activation energy was estimated to be approximately 4.4 eV. Two overlapped peaks appeared at approximately 900 and 1200 K in the case of D2 release. The shapes of spectra showed strong dependence on the heating rate.

Document Type: Research Article

DOI: http://dx.doi.org/10.1111/j.1551-2916.2005.00405.x

Affiliations: 1: Departments of Advanced Nuclear Heat Technology and Materials Science, Japan Atomic Energy Research Institute, Ibaraki, Japan 2: Faculty of Education, Nagasaki University, Nagasaki, Japan 3: Ibaraki University, Ibaraki, Japan 4: Research Organization for Information Science & Technology, Ibaraki, Japan 5: Neutron Science Research Center, Japan Atomic Energy Research Institute, Ibaraki, Japan 6: Office of Planning, Japan Atomic Energy Research Institute, Chiba, Japan

Publication date: August 1, 2005

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