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Influence of Synthesis Temperature on the Defect Structure of Boron Carbide: Experimental and Modeling Studies

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Boron carbide (B4C) was synthesized from the elements at temperatures ranging from 1300° to 2100°C using the spark plasma synthesis method. Significant densification commenced at about 1500°C and was accompanied by a corresponding decrease in the defect structure of this carbide. Changes in the X-ray diffraction patterns were in agreement with predictions of simulation studies based on the presence of twins. Transmission electron microscopy observations were consistent with the experimental observations and the modeling predictions.

Document Type: Research Article


Affiliations: 1: Department of Chemical Engineering and Materials Science, University of California, Davis, California 95616 2: Department of Materials Chemistry and the High-Tech Research Center, Ryukoku University, Seta, Ohtsu, Japan

Publication date: June 1, 2005


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