Phase Equilibria in the Ga2O3In2O3 System

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Subsolidus phase relationships in the Ga2O3–In2O3 system were studied by X-ray diffraction and electron probe microanalysis (EPMA) for the temperature range of 800°–1400°C. The solubility limit of In2O3 in the -gallia structure decreases with increasing temperature from 44.1 ± 0.5 mol% at 1000°C to 41.4 ± 0.5 mol% at 1400°C. The solubility limit of Ga2O3 in cubic In2O3 increases with temperature from 4.X ± 0.5 mol% at 1000°C to 10.0 ± 0.5 mol% at 1400°C. The previously reported transparent conducting oxide phase in the Ga-In-O system cannot be GaInO3, which is not stable, but is likely the In-doped -Ga2O3 solid solution.

Document Type: Research Article


Affiliations: Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208

Publication date: January 1, 1997

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