Skip to main content

Phase Equilibria in the Ga2O3In2O3 System

Buy Article:

$51.00 plus tax (Refund Policy)


Subsolidus phase relationships in the Ga2O3–In2O3 system were studied by X-ray diffraction and electron probe microanalysis (EPMA) for the temperature range of 800°–1400°C. The solubility limit of In2O3 in the -gallia structure decreases with increasing temperature from 44.1 ± 0.5 mol% at 1000°C to 41.4 ± 0.5 mol% at 1400°C. The solubility limit of Ga2O3 in cubic In2O3 increases with temperature from 4.X ± 0.5 mol% at 1000°C to 10.0 ± 0.5 mol% at 1400°C. The previously reported transparent conducting oxide phase in the Ga-In-O system cannot be GaInO3, which is not stable, but is likely the In-doped -Ga2O3 solid solution.

Document Type: Research Article


Affiliations: Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208

Publication date: 1997-01-01

  • Access Key
  • Free content
  • Partial Free content
  • New content
  • Open access content
  • Partial Open access content
  • Subscribed content
  • Partial Subscribed content
  • Free trial content
Cookie Policy
Cookie Policy
Ingenta Connect website makes use of cookies so as to keep track of data that you have filled in. I am Happy with this Find out more