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Compressive Creep and Creep Failure of 8Y2O3/3Al2O3-Doped Hot-Pressed Silicon Nitride

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Abstract:

The compressive creep properties of hot-pressed Si3N48Y2O3—3Al2O3 (wt%) have been investigated in the temperature range of 1543–1603 K in air. The stress exponent, n, of the power creep law was determined to be 1.5, and the activation energy was determined to be 650 kJ/mol. Transmission electron microscopy observations showed that grain-boundary sliding occurred with cavitation formation in the grain-boundary glassy phase. The quasi-steady-state creep results were consistent with that of the diffusion-controlled solution—diffusion—precipitation creep mechanism, and the distinguished failure mechanism was cavitation creep damage controlled by the viscosity of the boundary glassy phase. The compressive creep failure time, obtained at 1573 K, in the stress range of 175–300 MPa, followed the MonkmanGrant relation, indicating that cavity growth was mainly controlled by the creep response of the material.

Document Type: Research Article

DOI: http://dx.doi.org/10.1111/j.1151-2916.1997.tb02794.x

Affiliations: 1: Université des Sciences et Technologies de Lille, 59655 Villeneuve-d'Ascq, France 2: National Research Council, Research Institute for Ceramic Technology (CNR-IRTEC), 48018 Faenza, Italy

Publication date: January 1, 1997

bsc/jace/1997/00000080/00000001/art00010
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