Electrical Properties of Epitaxial 0.65Pb (Mg

Authors: Jiang, Juan; Hur, Sung‐Gi; Yoon, Soon‐Gil

Source: International Journal of Applied Ceramic Technology, Volume 8, Number 6, 1 November 2011 , pp. 1393-1399(7)

Publisher: Wiley-Blackwell

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Thin films of 0.65Pb (Mg1/3Nb2/3)O3‐0.35PbTiO3(PMN‐PT) of thickness 300 nm were grown on Si (001) substrates using conventional pulsed laser deposition (PLD) at substrate temperature in the range of 500°–650°C in oxygen ambient of 300 mTorr. The La0.5Sr0.5CoO3−δ (LSCO) thin films (used as bottom electrode) of RMS roughness of approximately 1.7 nm and resistivity of 2100 μΩ‐cm were epitaxially grown on CeO2/YSZ‐buffered Si (001) substrates. The high‐resolution X‐ray diffraction and transmission electron microscopy results show that the PMN‐PT films grown on LSCO/CeO2/YSZ/Si substrates at 550°C exhibit the epitaxial perovskite structure. The PMN‐PT films exhibited a high dielectric constant of about 1631 and a low dissipation factor of 0.06 at a frequency of 10 kHz. A good PE (polarization−electric field) hysteresis characteristic with remanent polarization of 6.34 μC/cm2 and a coercive field of 33.5 kV/cm was obtained on the PMN‐PT films.

Document Type: Research Article

DOI: http://dx.doi.org/10.1111/j.1744-7402.2010.02605.x

Affiliations: School of Nano Science and Technology, Chungnam National University, Daeduk Science Town, Daejeon 305-764, Republic of Korea

Publication date: November 1, 2011

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