Skip to main content

Ultrasonic Evaluation of High-Density Silicon Carbide Ceramics

Buy Article:

$43.00 plus tax (Refund Policy)

Nondestructive ultrasound testing has been evaluated as a technique for analyzing isolated bulk defects and microstructural inhomogeneities in silicon carbide (SiC). Three SiC samples of varying thickness, two of which were fabricated by hot pressing and a third that was fabricated by chemical vapor deposition (CVD), were characterized using pulse–echo ultrasound characterization at a frequency of 75 MHz. Point analysis techniques were utilized to measure variations in time-of-flight (TOF), or ultrasound travel time through each sample, for calculation of regional differences in material velocity and elastic properties. C-scan imaging was used to evaluate differences in both TOF and reflected signal amplitude over the area of each sample. Area-under-the-curve (AUTC) and full-width at half-maximum (FWHM) data were obtained from normalized histograms to establish trends for direct sample comparison. It was determined that lower AUTC and FWHM values correlated to higher density samples with fewer inhomogeneities. However, the histogram tail area and distribution were also important features, providing information about specific inhomogeneities and their distributions.
No References
No Citations
No Supplementary Data
No Data/Media
No Metrics

Document Type: Research Article

Affiliations: Department of Materials Science and Engineering, Rutgers University, Piscataway, New Jersey 08854-8065

Publication date: 2008-03-01

  • Access Key
  • Free content
  • Partial Free content
  • New content
  • Open access content
  • Partial Open access content
  • Subscribed content
  • Partial Subscribed content
  • Free trial content
Cookie Policy
X
Cookie Policy
Ingenta Connect website makes use of cookies so as to keep track of data that you have filled in. I am Happy with this Find out more