If you are experiencing problems downloading PDF or HTML fulltext, our helpdesk recommend clearing your browser cache and trying again. If you need help in clearing your cache, please click here . Still need help? Email help@ingentaconnect.com

Cu2O/Cu Cermet as a Candidate Inert Anode for Al Production

$48.00 plus tax (Refund Policy)

Download / Buy Article:


Cu2O/xCu (x=0–25 wt%) cermets were evaluated as a novel partially inert anode for aluminum (Al) production. The physical and mechanical properties, including the compressive strength, flexural strength, thermal expansion coefficient, thermal conductivity, and dc electrical conductivity were tested at room temperature and at temperatures up to 950°C. The coefficient of thermal expansion, compressive strength, flexural strength, thermal conductivity, and electrical conductivity of Cu2O/Cu cermets increased with increasing Cu content. High-temperature electrical conductivity measurements showed that with increasing temperature, the electrical conductivity increased when the Cu content was below the percolation threshold, while it decreased when the Cu content was above the percolation threshold. A relatively stable CuAlO2 layer formed on the cermet surface during electrochemical testing, and the corrosion rate of this anode was estimated to be about 1.8–1.9 cm/year in Al production.

Document Type: Research Article

DOI: http://dx.doi.org/10.1111/j.1744-7402.2007.02154.x

Affiliations: 1: School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China 2: Physical Chemistry Department, Siberian Federal University, Krasnoyarsk 660041, Russia

Publication date: October 1, 2007

Related content



Share Content

Access Key

Free Content
Free content
New Content
New content
Open Access Content
Open access content
Subscribed Content
Subscribed content
Free Trial Content
Free trial content
Cookie Policy
Cookie Policy
ingentaconnect website makes use of cookies so as to keep track of data that you have filled in. I am Happy with this Find out more