High‐resolution study of (002, 113, 11−1) four‐beam diffraction in Si
The results of a high‐resolution study of the (002, 113, ) four‐beam diffraction in Si are presented. The incident synchrotron radiation
beam was highly monochromated and collimated with a multi‐crystal arrangement in a dispersive setup in both vertical and horizontal planes, in an attempt to experimentally approach plane‐wave incident conditions. The Renninger scheme was used with the forbidden reflection reciprocal‐lattice
vector 002 normal to the crystal surface. The azimuthal and polar rotations were performed in the crystal surface plane and the vertical plane correspondingly. The polar angular curves for various azimuthal angles were measured and found to be very close to theoretical computer simulations,
with only a small deviation from the plane monochromatic wave. The effect of the strong two‐beam 002 diffraction was observed for the first time with the maximum reflectivity close to 80%. The structure factor of the 002 reflection in Si was experimentally determined as zero.