Skip to main content

High‐resolution study of (002, 113, 11−1) four‐beam diffraction in Si

Buy Article:

$51.00 plus tax (Refund Policy)

Abstract:

The results of a high‐resolution study of the (002, 113, ) four‐beam diffraction in Si are presented. The incident synchrotron radiation beam was highly monochromated and collimated with a multi‐crystal arrangement in a dispersive setup in both vertical and horizontal planes, in an attempt to experimentally approach plane‐wave incident conditions. The Renninger scheme was used with the forbidden reflection reciprocal‐lattice vector 002 normal to the crystal surface. The azimuthal and polar rotations were performed in the crystal surface plane and the vertical plane correspondingly. The polar angular curves for various azimuthal angles were measured and found to be very close to theoretical computer simulations, with only a small deviation from the plane monochromatic wave. The effect of the strong two‐beam 002 diffraction was observed for the first time with the maximum reflectivity close to 80%. The structure factor of the 002 reflection in Si was experimentally determined as zero.

Document Type: Research Article

DOI: http://dx.doi.org/10.1107/S0108767312012305

Publication date: May 1, 2012

Access Key

Free Content
Free content
New Content
New content
Open Access Content
Open access content
Partial Open Access Content
Partial Open access content
Subscribed Content
Subscribed content
Free Trial Content
Free trial content
Cookie Policy
X
Cookie Policy
Ingenta Connect website makes use of cookies so as to keep track of data that you have filled in. I am Happy with this Find out more