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Thin Film Field‐Effect Phototransistors from Bandgap‐Tunable, Solution‐Processed, Few‐Layer Reduced Graphene Oxide Films

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Abstract:

Thin film field‐effect phototransistors (FETs) can be developed from bandgap‐tunable, solution‐processed, few‐layer reduced graphene oxide (FRGO) films. Large‐area FRGO films with tunable bandgaps ranging from 2.2 eV to 0.5 eV can be achieved readily by solution‐processing technique such as spin‐coating. The electronic and optoelectronic properties of FRGO FETs are found to be closely related to their bandgap energy. The resulting phototransistor has great application potential in the field of photodetection.

Document Type: Communications

DOI: http://dx.doi.org/10.1002/adma.201002229

Affiliations: 1: Nanotechnology Center, Institute of Textiles and Clothing, The Hong Kong Polytechnic University, Hong Kong SAR 2: Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong SAR

Publication date: November 16, 2010

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