Coexistence of Filamentary and Homogeneous Resistive Switching in Fe‐Doped SrTiO

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Abstract:

Conductive atomic force microscopy combined with a delamination technique is used to remove the top electrode of Fe‐doped SrTiO3 metal–insulator–metal structures and gain insight into the active switching interface. Both a filamentary and an area‐dependent switching process with opposite switching polarities are found in the same sample.

Document Type: Communications

DOI: http://dx.doi.org/10.1002/adma.201001872

Affiliations: Institute of Solid State Research, Research Center Juelich, 52425 Juelich (Germany)

Publication date: November 16, 2010

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