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Solar Cells: Structural and Electronic Properties of Semiconductor‐Sensitized Solar‐Cell Interfaces (Adv. Funct. Mater. 24/2011)

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On page 4663, Christopher E. Patrick and Feliciano Giustino investigate the interface between TiO2 and Sb2S3 found in semiconductor‐sensitized solar cells by means of first principle calculations. An atomistic model of the TiO2 and Sb2S3 interface is proposed and the interfacial energy‐level alignment and ideal open‐circuit voltage are determined. The analysis of other isostructural sensitizers indicates that anti‐monselite (Sb2Se3) holds potential for delivering higher energy conversion efficiencies than the TiO2/Sb2S3 system.

Document Type: Research Article

DOI: http://dx.doi.org/10.1002/adfm.201190117

Affiliations: Department of Materials, University of Oxford, Parks Road, Oxford, OX1 3PH, UK

Publication date: December 20, 2011

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