Enhancement of Green Emission from InGaN/GaN Multiple Quantum Wells via Coupling to Surface Plasmons in a Two‐Dimensional Silver Array

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A novel approach to enhancing the emission efficiency of InGaN/GaN multiple quantum wells via coupling to surface plasmons (SPs) in a periodic two‐dimensional silver array is demonstrated. A higher internal quantum efficiency and a higher light extraction efficiency are simultaneously achieved by engraving an array of nanoholes into the p‐GaN cladding layer, followed by partial filling with silver. By top excitation and collection from the top of the Ag‐incorporated light emitting diodes (LEDs), a 2.8‐fold enhancement in peak photoluminescence intensity is demonstrated. The proposed nanoengraving technique offers a practical approach to overcoming the limitation of the exponentially decayed SP field without sacrificing the thickness of the p‐GaN layer and to controlling the effective coupling energy. The approach is feasible for high‐power lighting applications.

Document Type: Research Article

DOI: http://dx.doi.org/10.1002/adfm.201101814

Affiliations: 1: Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan, Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 701, Taiwan, Research Center for Energy Technology and Strategy, National Cheng Kung University, Tainan 701, Taiwan, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan 2: Research Center, Genesis Photonics Incorporation, Tainan 741, Taiwan

Publication date: December 20, 2011

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