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Recent Progress in Patterned Silicon Nanowire Arrays: Fabrication, Properties and Applications

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Abstract:

Currently there is great interest in patterned silicon nanowire arrays and applications. The accurately controlled fabrication of patterned silicon nanowire arrays with the desirable axial crystallographic orientation using simpler and quicker ways is very desirable and of great importance to material synthesis and future nanoscale optoelectronic devices that employ silicon. The recent advances in manipulating patterned silicon nanowire arrays and patents are reviewed with a focus on the progress of nanowire fabrication and applications.





Keywords: Antireflection Property; Fabrication; Field Electron Emission Prop-erties; Field-Effect Transistor; Patterned silicon nanowire arrays; Photovoltaic Applica-tion; Raman Spectroscopy; Si solar cells; Thermal Conductivity; axial crystallographic orientation; chemical vapor deposition; etching techniques; field-effect transistor; molecular beam epitaxy; optoelectronic devices; photoluminescence; physical va-por deposition; polystyrene monolayer mask; polystyrene spheres; selfselective electroless plating; silicon; thermal conductivity; thermal evaporation

Document Type: Research Article

Publication date: January 1, 2011

More about this publication?
  • Recent Patents on Nanotechnology publishes review articles by experts on recent patents on nanotechnology. A selection of important and recent patents on nanotechnology is also included in the journal. The journal is essential reading for all researchers involved in nanotechnology.
ben/nanotec/2011/00000005/00000001/art00006
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