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Current Development and Patents on High-Brightness White LED for Illumination

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In this paper, we reviewed the current development and patents for the application of high-brightness and highefficiency white light-emitting diode (LED). The high-efficiency GaN nanostructures, such as disk, pyramid, and rod were grown on LiAlO2 substrate by plasma-assisted molecular-beam epitaxy, and a model was developed to demonstrate the growth of the GaN nanostructures. Based on the results, the GaN disk p-n junction was designed for the application of high brightness and high efficiency white LED.





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Keywords: GaN; LiAlO2; light-emitting diode

Document Type: Research Article

Publication date: 2010-01-01

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  • Recent Patents on Nanotechnology publishes review articles by experts on recent patents on nanotechnology. A selection of important and recent patents on nanotechnology is also included in the journal. The journal is essential reading for all researchers involved in nanotechnology.
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