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A Compact, Semi-empirical Model of Carbon Nanotube Field Effect Transistors Oriented to Simulation Software

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We present a compact, semi-empirical model of Carbon Nanotube Field Effect Transistors (CNTFETs) directly and easily implementable in simulation software.

A new procedure, based on a best-fitting between the measured and simulated values of output device characteristics, is proposed in order to extract the optimal values of the CNTFET equivalent circuit elements.

To verify the versatility of the proposed model, we use it in circuit simulators to design some electronic circuits. In particular we investigate about the effects of the CNT quantum resistances and inductances, then demonstrating their role for both analog and digital applications at frequencies over about ten THz.

Keywords: Nanoelectronic devices; Semi-empirical Model; Simulation Software; analog and digital circuit design; carbon nanotube field effect transistors (CNTFETs); modelling; nanotechnology; silicon-based transistors

Document Type: Research Article


Publication date: 2011-04-01

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  • Current Nanoscience publishes authoritative reviews and original research reports, written by experts in the field on all the most recent advances in nanoscience and nanotechnology. All aspects of the field are represented including nano- structures, synthesis, properties, assembly and devices. Applications of nanoscience in biotechnology, medicine, pharmaceuticals, physics, material science and electronics are also covered. The journal is essential to all involved in nanoscience and its applied areas.
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