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A MOSFET-Like Infrared Sensor for the Enhancement of Photoconductivity and Photoresponsivity

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Abstract:

In this study, a metal oxide semiconductor field effect transistor (MOSFET)-like infrared (IR) sensing method is presented. The orderly uneven barrier-layer surface of an anodic aluminum oxide (AAO) membrane was used as the substrate. The thickness of the barrier-layer was reduced by phosphoric acid etching following which a microchannel was transferred to the barrier-layer by the photolithographic technique. Single walled carbon nanotubes (SWNTs) were deposited into the microchannel as the sensing element. A gold thin film that served as the gate electrode was sputtered on the opposite side of the barrier-layer of the AAO substrate. A thin layer of polydimethylsiloxane (PDMS) was then cast on the SWNTs to insulate them from the surrounding ambiance. A thin film of indium tin oxide (ITO) was sputtered onto the PDMS layer to act as the counter electrode for the gate electrode. The conductance of the sensing element could be better controlled by the width of the microchannel and the amount of the deposited SWNTs. Experiments demonstrated that the proposed MOSFET-like IR sensor could effectively sense IR signals in the air at room temperature under a very weak power intensity (17 μW/cm2) of IR illumination and an 0.01 V applied drain-source voltage. A 0.5 sec photocurrent response time and a 2.4% of conductivity enhancement were measured.





Keywords: FET; IR sensor; ITO; JSR THB-120N; MOSFET-like; MWNT; NIR; PDMS; Photoconductivity; Photoresponsivity; Polarization; SDS; SWNTs; adsorbed oxygen; anodic aluminum oxide; barrier-layer; fabrication; gate electrode; photocurrent; photolithography; photons; pressure; radio frequency; spectroscopy; substrate; temperatures; thin films

Document Type: Research Article

DOI: http://dx.doi.org/10.2174/157341310793348704

Publication date: December 1, 2010

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  • Current Nanoscience publishes authoritative reviews and original research reports, written by experts in the field on all the most recent advances in nanoscience and nanotechnology. All aspects of the field are represented including nano- structures, synthesis, properties, assembly and devices. Applications of nanoscience in biotechnology, medicine, pharmaceuticals, physics, material science and electronics are also covered. The journal is essential to all involved in nanoscience and its applied areas.
ben/cnano/2010/00000006/00000006/art00013
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